| Parameter | Symbol | Rating | Unit | | :--- | :--- | :--- | :--- | | Drain-Source Voltage | VDS | 20 | V | | Gate 1 to Source Voltage | VG1S | ±15 | V | | Gate 2 to Source Voltage | VG2S | ±15 | V | | Drain Current | ID | 30 | mA | | Total Power Dissipation | PT | 200 | mW | | Channel Temperature | Tch | 125 | °C | | Storage Temperature | Tstg | -40 to +125 | °C |
When buying replacement stock, look out for the complete markings to ensure you are receiving the low-noise, high-temperature resilient metal-can variant rather than an unrelated standard transistor. If you are troubleshooting a specific circuit, let me know:
As the 3SK41 is increasingly classified as an "obsolete" or hard-to-find part, finding a modern equivalent is often necessary for repairs or new designs. Common substitutes include: 3sk41 datasheet
(Note: Always verify the pinout with the specific manufacturer’s marking, as some variations exist.) 5. Common Applications
V(BR)GSScap V sub open paren cap B cap R close paren cap G cap S cap S end-sub ): 7.0 V 8.0 mS Maximum Input Capacitance ( Cisscap C sub i s s end-sub ): 5.0 pF Maximum Operating Temperature: Robust up to 105°C | Parameter | Symbol | Rating | Unit
Operating the 3SK41 beyond these limits can cause permanent damage to the GaAs structure. Engineers must design biasing networks that keep the transistor well within these boundary thresholds at an ambient temperature ( Drain-Source Voltage VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D Total Power Dissipation PDcap P sub cap D 200 to 250 Channel Temperature Tchcap T sub c h end-sub ∘Craised to the composed with power C Storage Temperature Range Tstgcap T sub s t g end-sub -55 to +125 ∘Craised to the composed with power C 4. Electrical Characteristics
Connected to ground/common loop, often shared with the metal shield. Gate 1 (G1) The primary RF signal input pin; dictates transconductance. Pin 3 Gate 2 (G2) Common Applications V(BR)GSScap V sub open paren cap
(Note: A gate driver IC is essential to ensure the $V_GS$ threshold is met quickly to minimize switching losses in the linear region.)
RDS(on)cap R sub cap D cap S open paren o n close paren end-sub to reduce thermal dissipation during conduction cycles. Pinout and Mechanical Configuration